Rashba Effect in Functional Spintronic Devices.,Advanced Materials

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Rashba Effect in Functional Spintronic Devices.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-09-15 , DOI: 10.1002/adma.202002117
Hyun Cheol Koo _{1,

2} , Seong Been Kim _{1,

2} , Hansung Kim _{1,

2} , Tae-Eon Park ₁ , Jun Woo Choi ₁ , Kyoung-Whan Kim ₁ , Gyungchoon Go ₃ , Jung Hyun Oh ₃ , Dong-Kyu Lee ₃ , Eun-Sang Park _{1,

2} , Ik-Sun Hong ₂ , Kyung-Jin Lee _{2,

3}

Affiliation

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high‐performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin–orbit torque devices. For spin field‐effect transistors, the gate‐voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all‐electric spin field‐effect transistors. For spin–orbit torque devices, recent theories and experiments on interface‐generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

中文翻译：

功能自旋电子器件中的拉什巴效应。

利用自旋传输增加了电子设备的功能，并使此类设备能够克服与速度和功率有关的物理限制。在异质结构的界面处利用Rashba效应为高性能器件的开发提供了可喜的机遇，因为它可以实现对自旋信息的电子控制。在此，重点主要放在与利用Rashba效应的两个最引人注目的设备有关的进展：自旋晶体管和自旋轨道扭矩设备。对于自旋场效应晶体管，讨论了拉什巴效应的栅极电压操纵以及自旋进动的后续控制，包括全电自旋场效应晶体管。对于自旋轨道扭矩装置，讨论了界面产生的自旋电流的最新理论和实验。

更新日期：2020-09-15

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