Abstract Sp2-bonded boron nitride (BN) films are deposited on Ni and Si substrates with mean ion impact energies between a few eV and around 100 eV by surface-wave plasma enhanced chemical vapor deposition and their electrical insulation characteristics are examined for temperatures up to 300 °C. The overall crystallinity and order of sp2 structure in the films increase with decreasing ion energy, while the mass density becomes as high as sintered hexagonal BN only when the ion energy is above ∼50 eV. For a given temperature, the electrical resistivity of the films measured for metal-BN-metal structures increases with decreasing ion energy, and hence increasing crystallinity and order of sp2 structure, almost independent of mass density. A decrease in resistivity with temperature is small below 150 °C, then becomes large above 150 °C with a drastic increase in apparent activation energy for carriers, which is attributed to generation and transport of the carriers that get over higher barrier heights associated with stronger ion impact.

中文翻译：

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使用低能离子冲击沉积氮化硼介电薄膜的金属-绝缘体-金属结构的电绝缘特性

摘要 Sp2 键合氮化硼 (BN) 薄膜沉积在 Ni 和 Si 衬底上，平均离子冲击能在几 eV 到 100 eV 之间通过表面波等离子体增强化学气相沉积，并在高达300℃。薄膜中的整体结晶度和 sp2 结构的有序性随着离子能量的降低而增加，而只有当离子能量高于约 50 eV 时，质量密度才变得与烧结六方氮化硼一样高。对于给定的温度，测量金属-BN-金属结构的薄膜的电阻率随着离子能量的降低而增加，因此增加了结晶度和 sp2 结构的顺序，几乎与质量密度无关。低于 150 °C，电阻率随温度的降低很小，