Bismuth vanadate (BiVO₄) is being widely identified as a leading n-type semiconductor material for photoelectrochemical (PEC) water splitting. Nevertheless, achieving efficient PEC water oxidation process through BiVO₄ photoanode still faces serious challenge such as severe electron-hole recombination. In this case, PEC activity of BiVO₄ photoanode was enhanced by decoration of three-dimensional CoMn-layered double hydroxide (CoMn-LDH) nanoflakes on the BiVO₄ surface via a facile electrodeposition process. It was suggested that CoMn-LDH played a synergistic effect on broadening internal light absorption, which accelerated injection of holes carrier to electrolyte and alleviated the electron-hole recombination, resulting in expediting faster PEC water oxidation reaction kinetics. Consequently, the photocurrent density of BiVO₄/CoMn-LDH photoanode achieved 2.69 mA cm⁻² at 1.23 V_RHE, 2.45 times higher than the pristine BiVO₄. What's more, 220 mV negative-shift took place on onset potential that was further decreased to 0.31 V_RHE. The vastly enhanced PEC performance was also prioritized to those of Co and Mn single relatives. This work demonstrated that the synergistic BiVO₄/CoMn-LDH as a capable candidate material, can be utilized for effective PEC water splitting.

钒酸铋（BiVO ₄）被广泛认为是用于光电化学（PEC）水分解的主要n型半导体材料。然而，通过BiVO ₄光电阳极实现有效的PEC水氧化工艺仍然面临严峻的挑战，例如严重的电子-空穴复合。在这种情况下，BiVO的PEC活性₄光电阳极对所BiVO增强通过的三维期CoMn-层状双氢氧化物（期CoMn-LDH）纳米薄片装饰₄表面通过简单的电沉积过程。提示CoMn-LDH在加宽内部光吸收方面具有协同作用，这加速了空穴载体向电解质的注入并减轻了电子-空穴的复合，从而加快了PEC水氧化反应动力学。因此，BiVO ₄ / CoMn-LDH光阳极的光电流密度在1.23 V _RHE时达到2.69 mA cm ^-2，是原始BiVO _4的2.45倍。此外，起始电位发生了220 mV的负移，该电位进一步降低至0.31 V _RHE。大大提高的PEC性能也优先于Co和Mn单亲属。这项工作表明协同BiVO ₄ / CoMn-LDH作为一种有效的候选材料可以用于有效的PEC水分解。