Abstract

In this study, a technology producing undoped crystalline zinc oxide films with purposefully changed electrical resistance ρ = 3 × 10^–4–1 × 10⁷ Ω cm has been developed. The relationship between the electrical characteristics of ZnO layers and the parameters of their deposition has been studied, and the conditions for the formation of high-resistance i-ZnO and low-resistance n-ZnO films with specified values of electrical resistance have been determined. It has been established that the dominant factor determining the conductivity of ZnO films is a change in the concentration of free carriers, controlled by oxygen vacancies. To select the optimal conditions for the formation of highly transparent coatings with a given conductivity, the microstructure and spectral properties (edge absorption and transmission spectra in the transparency region) of n-ZnO films deposited by reactive magnetron sputtering of a zinc target in an argon atmosphere with oxygen (10% Ar, 90% O₂) at a pressure of 5 × 10^–3 Torr have been studied. It has been shown that the developed method for the discrete formation of ZnO films on amorphous substrates provides stoichiometric crystal structures with a high packing density and spatial orientation of crystallites in the [002] direction. Even in the case of n-ZnO films with ρ = 3 × 10^–3 Ω cm, the microstructure causes a high transmittance of the coatings.

中文翻译：

---

反应磁控溅射获得的ZnO薄膜：微观结构，电学和光学特性

摘要

在这项研究中，一个技术生产具有有目的地改变电阻未掺杂的晶体氧化锌膜ρ= 3×10 ^-4〜1×10 ⁷ Ω厘米已经研制成功。研究了ZnO层的电学特性与其沉积参数之间的关系，以及形成高电阻i -ZnO和低电阻n的条件已经确定了具有规定电阻值的-ZnO膜。已经确定，决定ZnO薄膜电导率的主要因素是自由载流子浓度的变化，受氧空位的控制。为了选择形成具有给定电导率的高度透明涂层的最佳条件，通过氩气中锌靶的反应磁控溅射沉积的n -ZnO薄膜的微观结构和光谱特性（透明区域中的边缘吸收和透射光谱）在5×10 ^–3的压力下充满氧气（10％Ar，90％O ₂）的气氛已经研究了Torr。已经表明，用于在无定形衬底上离散形成ZnO膜的开发方法提供了具有高堆积密度和在[002]方向上的微晶空间取向的化学计量晶体结构。即使在的情况下Ñ用ρ= 3×10 -ZnO膜^-3 Ωcm，则微观结构造成的涂层的高透射率。