Structural, electronic and optical properties for halidedouble perovskites compounds K₂GeSnBr₆ and K₂GeSnI₆ are studied in this work. Based on the (FP-LAPW) method, the previous properties are treated within the (GGA-PBE) and the (mBJ-GGA) approximations. The results show that these compounds are stable in the non-magnetic phase (NM). Electronic properties indicate that these compounds have a semiconductor behavior with a direct band gap. The calculated formation energy and cohesive energy indicate that these alloys have good chemical stability. High absorption coefficient and high reflectivity prove that these materials are appropriates for optoelectronic applications, including solar and photovoltaic cells.

在这项工作中研究了卤化双钙钛矿化合物K ₂ GeSnBr ₆和K ₂ GeSnI _6的结构，电子和光学性质。基于（FP-LAPW）方法，以前的属性在（GGA-PBE）和（mBJ-GGA）近似值内进行处理。结果表明，这些化合物在非磁性相（NM）中稳定。电子性质表明这些化合物具有带隙直接的半导体行为。计算得出的形成能和内聚能表明这些合金具有良好的化学稳定性。高吸收系数和高反射率证明这些材料适用于光电应用，包括太阳能电池和光伏电池。