当前位置: X-MOL 学术Jetp Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Lead-free Semiconductors with High Absorption: Insight into the Optical Properties of K 2 GeSnBr 6 and K 2 GeSnI 6 Halide Double Perovskites
JETP Letters ( IF 1.4 ) Pub Date : 2020-09-15 , DOI: 10.1134/s0021364020180010
M. Houari , B. Bouadjemi , A. Abbad , T. Lantri , S. Haid , W. Benstaali , M. Matougui , S. Bentata

Structural, electronic and optical properties for halidedouble perovskites compounds K2GeSnBr6 and K2GeSnI6 are studied in this work. Based on the (FP-LAPW) method, the previous properties are treated within the (GGA-PBE) and the (mBJ-GGA) approximations. The results show that these compounds are stable in the non-magnetic phase (NM). Electronic properties indicate that these compounds have a semiconductor behavior with a direct band gap. The calculated formation energy and cohesive energy indicate that these alloys have good chemical stability. High absorption coefficient and high reflectivity prove that these materials are appropriates for optoelectronic applications, including solar and photovoltaic cells.



中文翻译:

高吸收率的无铅半导体:洞察K 2 GeSnBr 6和K 2 GeSnI 6卤化物双钙钛矿的光学性质

在这项工作中研究了卤化双钙钛矿化合物K 2 GeSnBr 6和K 2 GeSnI 6的结构,电子和光学性质。基于(FP-LAPW)方法,以前的属性在(GGA-PBE)和(mBJ-GGA)近似值内进行处理。结果表明,这些化合物在非磁性相(NM)中稳定。电子性质表明这些化合物具有带隙直接的半导体行为。计算得出的形成能和内聚能表明这些合金具有良好的化学稳定性。高吸收系数和高反射率证明这些材料适用于光电应用,包括太阳能电池和光伏电池。

更新日期:2020-09-15
down
wechat
bug