It is shown that in orthorhombic TaS₃ with quenching defects, when the temperature changes in the region below the Peierls transition temperature T < T_P, forced diffusion of defects arises due to their strong interaction with the charge density wave (CDW). The relationships between the concentration of quenching defects, n, the threshold field of the onset of CDW sliding, E_T, and the defect-induced shift of T_P are determined: E_T∝ n and ΔT_P∝ n. This set of laws corresponds to the case when quenching defects positions are correlated with the CDW. The ordinary (without thermocycling) diffusion of quenching defects was detected at T ≈ 300 K, its diffusion coefficient and the height of the energy barrier were estimated. This made it possible to clarify the most probable nature of the defects. These are interstitial sulfur impurities introduced during quenching into the van der Waals gap between the chains and partially ordered at T < T_P due to interaction with the CDW. This ordering significantly lowers the height of the energy barrier of forced diffusion in comparison with ordinary diffusion when the spatial configuration of the CDW changes during thermocycling. This leads to the appearance of anomalously high low-temperature forced mobility of correlated impurities.

结果表明，在具有淬火缺陷的斜方TaS _3中，当温度在Peierls转变温度T < T _P以下的区域发生变化时，由于缺陷与电荷密度波（CDW）的强烈相互作用而导致了缺陷的强制扩散。确定淬火缺陷浓度n，CDW滑动开始的阈值场E _T和缺陷诱发的T _P位移之间的关系：E _T ∝ n和ΔT _P ∝ n。这套定律对应于淬火缺陷位置与CDW相关的情况。在T≈300 K时检测到淬火缺陷的普通（无热循环）扩散，估计了其扩散系数和能垒的高度。这使得澄清缺陷的最可能性质成为可能。这些是在淬火过程中引入到链之间范德华间隙中的间隙性硫杂质，在T < T _P时有序排列由于与CDW的互动。当CDW的空间构型在热循环过程中发生变化时，与普通扩散相比，这种顺序大大降低了强制扩散的能垒高度。这导致出现相关杂质的异常高的低温强迫迁移率。