A solar cell capacitance simulator named SCAPS 1D was used in the prediction study of Cu(In, Ga)Se 2 (CIGS), CuIn(S, Se) 2 (CISSe) and Cu 2 ZnSnS 4 (CZTS) based solar cells where indium sulphide (In 2 S 3 ), fluorine-doped tin oxide/FTO (SnO 2 :F) and gold (Au) were used as buffer layer, window layer and back contact respectively. We investigated the effect of thickness, defect density and carrier density of the different absorber layers, thickness of the buffer layer and at 300 K temperature and standard illumination, the optimum devices revealed highest efficiencies of 18.08%, 22.50%, 16.94% for CIGS, CISSe, CZTS-based cells respectively. Effect of operating temperature, wavelength of light and electron affinity of the buffer layer on the optimized solar cell performance was also observed. Moreover, simulations were run with tin (Sn) doped In 2 S 3 buffer layer to see the change in electrical m...

中文翻译：

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使用SCAPS 1D对以In 2 S 3为缓冲层和Au为背接触的CIGS，CISSe和CZTS基太阳能电池进行数值模拟

名为SCAPS 1D的太阳能电池电容模拟器用于基于Cu（In，Ga）Se 2（CIGS），CuIn（S，Se）2（CISSe）和Cu 2 ZnSnS 4（CZTS）的太阳能电池的预测研究硫化物（In 2 S 3），掺氟的氧化锡/ FTO（SnO 2：F）和金（Au）分别用作缓冲层，窗口层和背接触。我们研究了厚度，缺陷密度和不同吸收层的载流子密度，缓冲层的厚度以及在300 K温度和标准照明下的影响，最佳器件显示CIGS的最高效率分别为18.08％，22.50％，16.94％，分别基于CISSe和CZTS的单元。还观察到工作温度，光的波长和缓冲层的电子亲和力对优化的太阳能电池性能的影响。此外，