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Room-temperature electric control of exchange bias effect in CoO 1 – δ /Co films using Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 (110) substrates
Chinese Physics B ( IF 1.5 ) Pub Date : 2020-09-13 , DOI: 10.1088/1674-1056/aba611
Xin Wen 1 , Rui Wu 1 , Wen-Yun Yang 1, 2, 3 , Chang-Sheng Wang 1, 2, 3 , Shun-Quan Liu 1, 2, 3 , Jing-Zhi Han 1, 2, 3 , Jin-Bo Yang 1, 2, 3
Affiliation  

Significant electric control of exchange bias effect in a simple CoO 1– δ /Co system, grown on piezoelectric Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both the coercivity field ( H C ) and the exchange bias field ( H E ), of 31% and 5%, respectively, have been observed when the electric field is applied to the substrate. While the change of coercivity is related to the enhanced uniaxial anisotropy in the ferromagnetic layer, the change of the exchange bias field can only originate from the spin reorientation in the antiferromagnetic CoO 1– δ layer caused by the strain-induced magnetoelastic effect. A large H E / H C > 2, and H E ∼ 110 Oe at room temperature, as well as the low-energy fabrication of this system, make it a practical system for spin...

中文翻译:

使用Pb(Mg 1/3 Nb 2/3)0.7 Ti 0.3 O 3(110)衬底在CoO 1-δ/ Co薄膜中进行交流偏置效应的室温电控制

在压电Pb(Mg 1/3 Nb 2/3)0.7 Ti 0.3 O 3(110)(PMN-PT)衬底上生长的简单CoO 1–δ/ Co系统中,可以实现对交换偏压效应的重要电控制。室内温度。当向基板施加电场时,已经观察到矫顽力场(HC)和交换偏压场(HE)的明显变化分别为31%和5%。尽管矫顽力的变化与铁磁层中单轴各向异性的增强有关,但交换偏置场的变化只能源于应变感应磁弹性效应在反铁磁CoO1-δ层中的自旋取向。大的HE / HC> 2,室温下HE〜110 Oe,以及该系统的低能耗制造,使其成为自旋...
更新日期:2020-09-14
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