Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO 3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal–insulator transition was achieved by inserting and extracting H + ions in the NdNiO 3 channel through electrolyte gating. The non-volatile conductance change reached 10 4 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO 3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO 3 has great potential for applications in neuromorphic devices.

中文翻译：

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具有NdNiO 3的突触晶体管

近来，用于人工智能应用的神经形态设备引起了很多关注。在这项工作中，提出了一种基于NdNiO 3外延膜（典型的相关电子材料）的三端电解质门控突触晶体管。通过在NdNiO 3通道中通过电解质浇注插入和提取H +离子，可以实现电压控制的金属-绝缘体转变。在2 V栅极电压下，非易失性电导变化达到10 4。通过操纵插入的质子的数量，三末端NdNiO 3人工突触模仿了重要的突触功能，例如突触可塑性和依赖尖峰时间的可塑性。这些结果表明，相关材料NdNiO 3在神经形态装置中具有巨大的应用潜力。