In this paper, we investigate the effects of lattice strain on the electrical and magnetotransport properties of La 0.7 Sr 0.3 MnO 3 (LSMO) films by changing film thickness and substrate. For electrical properties, a resistivity upturn emerges in LSMO films, i.e. , LSMO/STO and LSMO/LSAT with small lattice strain at a low temperature, which originates from the weak localization effect. Increasing film thickness weakens the weak localization effect, resulting in the disappearance of resistivity upturn. While in LSMO films with a large lattice strain ( i.e. , LSMO/LAO), an unexpected semiconductor behavior is observed due to the linear defects. For magnetotransport properties, an anomalous in-plane magnetoresistance peak (pMR) occurs at low temperatures in LSMO films with small lattice strain, which is caused by two-dimensional electron gas (2DEG). Increasing film thickness suppresses the 2DEG, which weakens the pMR. Besides, it is found that...

中文翻译：

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La 0.7 Sr 0.3 MnO 3薄膜中随着晶格应变的电和磁传输性质的演变

在本文中，我们通过改变膜厚和基底来研究晶格应变对La 0.7 Sr 0.3 MnO 3（LSMO）膜的电和磁传输性质的影响。对于电性能，在低温下具有较小晶格应变的LSMO膜即LSMO / STO和LSMO / LSAT中出现了电阻率上调，这是由于弱的局部化效应引起的。膜厚度的增加削弱了弱化的局部作用，导致电阻率上调的消失。而在具有大晶格应变的LSMO薄膜（即LSMO / LAO）中，由于线性缺陷而观察到了意外的半导体行为。对于磁传输特性，在低温下，晶格应变小的LSMO薄膜中会出现一个异常的面内磁阻峰（pMR），这是由二维电子气（2DEG）引起的。膜厚度的增加会抑制2DEG，从而削弱pMR。此外，发现...