An aluminum oxide (Al 2 O 3 ) passivation film that prevents the oxidation of a sputtered and sulfurized molybdenum disulfide (MoS 2 ) film was investigated for an enhancement of the Hall-effect mobility. A remarkably high Hall-effect electron mobility value of 100 cm 2 V −1 s −1 was achieved using 3 nm passivation film, as compared to 25 cm 2 V −1 s −1 for an as-deposited MoS 2 film, because sulfurization is able to be yielded even through the Al 2 O 3 film into the MoS 2 film.

中文翻译：

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甚至通过Al 2 O 3钝化膜的硫化也可通过硫化提高溅射的MoS 2膜的霍尔效应迁移率

为了增强霍尔效应迁移率，研究了一种氧化铝（Al 2 O 3）钝化膜，该钝化膜可防止溅射和硫化的二硫化钼（MoS 2）膜氧化。使用3 nm钝化膜可实现100 cm 2 V -1 s -1的非常高的霍尔效应电子迁移率值，而沉积MoS 2膜则为25 cm 2 V -1 s -1，这是因为硫化即使从Al 2 O 3膜到MoS 2膜也可以产生屈服。