This paper proposes a method of repairing interface defects by supercritical nitridation technology, in order to suppress the threshold voltage shift of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). We find that supercritical NH 3 fluid has the characteristics of both liquid NH 3 and gaseous NH 3 simultaneously, i.e., high penetration and high solubility, which penetrate the packaging of MIS-HEMTs. In addition, ##IMG## [http://ej.iop.org/images/0256-307X/37/9/097101/cpl_37_9_097101_ieqn1.gif] {${{\rm{NH}}}_{2}^{-}$} produced via the auto coupling ionization of NH 3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature processes. After supercritical fluid treatment, the threshold voltage shift is reduced from 1 V to 0 V, and the interface trap density is reduced by two orders of magnitude. The results show that ...

中文翻译：

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通过超临界氮化技术实现的AlGaN / GaN MIS-HEMT的性能增强

为了抑制AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管的阈值电压漂移，提出了一种采用超临界氮化技术修复界面缺陷的方法。我们发现，超临界NH 3流体同时具有液态NH 3和气态NH 3的特性，即高渗透性和高溶解度，它们渗透了MIS-HEMTs的包装。此外，## IMG ## [http://ej.iop.org/images/0256-307X/37/9/097101/cpl_37_9_097101_ieqn1.gif] {$ {{\ rm {NH}}} _ {2}通过NH 3的自动偶合电离产生的^ {-} $}具有很强的亲核能力，并且能够填充由高温工艺产生的GaN表面附近的氮空位。经过超临界流体处理后，阈值电压偏移从1 V降低至0 V，界面陷阱密度降低了两个数量级。结果表明...