We examine an amorphous oxide semiconductor (AOS) of ZnRhCuO. The a -ZnRhCuO films are deposited at room temperature, having a high amorphous quality with smooth surface, uniform thickness and evenly distributed elements, as well as a high visible transmittance above 87% with a wide bandgap of 3.12 eV. Using a -ZnRhCuO films as active layers, thin-film transistors (TFTs) and gas sensors are fabricated. The TFT behaviors demonstrate the p-type nature of a -ZnRhCuO channel, with an on-to-off current ratio of ∼ 1 × 10 3 and field-effect mobility of 0.079 cm 2 V –1 s –1 . The behaviors of gas sensors also prove that the a -ZnRhCuO films are of p-type conductivity. Our achievements relating to p-type a -ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.

中文翻译：

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室温处理的具有p型晶体管和气体传感器行为的ZnRhCuO非晶态薄膜

我们检查了ZnRhCuO的非晶氧化物半导体（AOS）。a -ZnRhCuO薄膜在室温下沉积，具有高非晶态质量，光滑的表面，均匀的厚度和均匀分布的元素，以及高于87％的高可见光透射率和3.12 eV的宽带隙。使用-ZnRhCuO膜作为有源层，可以制造薄膜晶体管（TFT）和气体传感器。TFT行为证明了-ZnRhCuO沟道的p型特性，开/关电流比约为1×10 3，场效应迁移率为0.079 cm 2 V –1 s –1。气体传感器的行为也证明了-ZnRhCuO薄膜具有p型导电性。我们与TFT器件在室温下制备p型a -ZnRhCuO薄膜有关的成就可能为AOS在透明柔性电子产品中的实际应用铺平了道路。