Using the newly-developed solid ionic gating technique, we measure the electrical transport property of a thin-flake NbSe 2 superconductor ( T c = 6.67 K) under continuous Li intercalation and electron doping. It is found that the charge-density-wave transition is suppressed, while at the same time a carrier density, decreasing from 7 × 10 14 cm –2 to 2 × 10 14 cm –2 also occurs. This tunable capability in relation to carrier density is 70%, which is 5 times larger than that found using the liquid ionic gating method [Phys. Rev. Lett. 117 (2016) 106801]. Meanwhile, we find that the scattering type of conduction electrons transits to the s – d process, which may be caused by the change of the occupied states of 4 d -electrons in Nb under the condition of Li intercalation. Simultaneously, we observe a certain decrement of electron-phonon coupling (EPC), based on the electron-phonon scattering model, in...

中文翻译：

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通过原位Li嵌入可调节2H-NbSe 2中的超导性

使用新开发的固体离子门控技术，我们在连续的Li嵌入和电子掺杂下测量了薄片状NbSe 2超导体（T c = 6.67 K）的电传输性质。发现电荷密度波跃迁被抑制，同时载流子密度也从7×10 14 cm -2减小到2×10 14 cm -2。这种相对于载流子密度的可调能力为70％，比使用液体离子门控方法发现的能力大5倍。莱特牧师 117（2016）106801]。同时，我们发现传导电子的散射类型过渡到s-d过程，这可能是由于在Li嵌入条件下Nb中4 d-电子的占据态的变化引起的。同时，