We investigate the surface structure and electronic properties of β -Sn islands deposited on a graphitized 6H-SiC (0001) substrate via low temperature scanning tunneling microscopy and spectroscopy. Owing to the confinement of the island geometry, quantum well states (QWSs) are formed, manifesting as equidistant peaks in the tunneling spectra. Furthermore, a distinct strip feature appears on the surfaces of odd-layer Sn islands, ranging from 15–19 layers, which is not present on the surfaces of even-layer Sn islands. The spatial distribution of strips can be modified by applying a bias pulse, using an STM tip. Furthermore, the strip-like structure shows significant impacts on the QWS. An energy splitting of the lowest unoccupied QWSs is observed in strip regions; this may be ascribed to caused the phase shift of the wave functions of the QWSs on the top surface, due to surface distortions created by the aforementioned strips.

中文翻译：

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β-Sn岛上对量子阱状态的可控调制

我们通过低温扫描隧道显微镜和光谱学研究了沉积在石墨化的6H-SiC（0001）衬底上的β-Sn岛的表面结构和电子性能。由于岛的几何形状的限制，形成了量子阱态（QWS），在隧道光谱中表现为等距峰。此外，奇数层锡岛表面上出现明显的带状特征，范围为15-19层，偶数层锡岛表面上不存在。条带的空间分布可以通过使用STM尖端施加偏置脉冲来进行修改。此外，条状结构对QWS产生了重大影响。在带状区域观察到最低的未占用QWS的能量分裂；