As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which has continued to lag behind advances in technology. This review paper provides a comprehensive overview of various chemical and mechanical phenomena such as contact mechanics, lubrication models, chemical reaction that occur between slurry components and films being polished, electrochemical reactions, adsorption behavior and mechanism, temperature effects, and the complex interactions occurring at the wafer interface during polishing. It also provides important insights into new strategies and novel concepts for next-generation CMP slurries. Finally, the challenges and future research directions related to the chemical and mechanical process and slurry chemistry are highlighted.

随着集成电路元件的最小特征尺寸缩小到7 nm以下，化学机械平面化（CMP）技术在过去的几十年中得到了长足的发展。人们对理解CMP的基础科学和技术的兴趣与日俱增，而CMP的科学和技术一直落后于技术进步。这篇综述文章全面概述了各种化学和机械现象，例如接触力学，润滑模型，浆液成分与被抛光膜之间发生的化学反应，电化学反应，吸附行为和机理，温度效应以及在该温度下发生的复杂相互作用。抛光过程中的晶圆界面。它还为下一代CMP浆料的新策略和新颖概念提供了重要见解。最后，