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Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-09-13 , DOI: 10.1021/acsaelm.0c00296 Diego Gutiérrez 1 , Jesús Alejandro de Sousa 1, 2 , Marta Mas-Torrent 1 , Núria Crivillers 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-09-13 , DOI: 10.1021/acsaelm.0c00296 Diego Gutiérrez 1 , Jesús Alejandro de Sousa 1, 2 , Marta Mas-Torrent 1 , Núria Crivillers 1
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Resistive switching effect is observed for a gallium–indium/gallium oxide/graphene junction. The use of a gallium-based liquid metal (LM) alloy, in this case, the eutectic gallium–indium with its native gallium oxide skin, directly provides the metal top contact and the oxide layer needed to fabricate a memory. Graphene is used as the bottom electrode due to its electrical properties and, importantly, because it prevents the formation of alloys, leading to a stable simple junction. With this structure, the ON/OFF ratio at 0.5 V between the high resistance state (HRS) and low resistance state (LRS) reached is ∼104 under ambient conditions. Deposition of an additional switching layer is not needed compared to other resistive random access memories [RRAMs], which makes this system less complex to fabricate. The migration of the oxygen atoms of the oxide layer would be intuitively considered the main reason for the modulation of the tunneling junction resistance, but we suggest that this is not the case and instead of that, charge trapping/detrapping at the very interface may dominate the switching function.
中文翻译：
镓基液态金属/石墨烯结中的电阻切换观察
对于镓-铟/氧化镓/石墨烯结，观察到了电阻切换效应。使用镓基液态金属（LM）合金（在本例中是具有自然氧化镓皮的共晶镓-铟）直接提供了金属顶部触点和制造存储器所需的氧化物层。由于石墨烯的电特性，石墨烯被用作底部电极，重要的是，石墨烯可以防止形成合金，从而形成稳定的简单结。采用这种结构，高电阻状态（HRS）和低电阻状态（LRS）之间在0.5 V时的开/关比约为10 4在环境条件下。与其他电阻型随机存取存储器[RRAM]相比，不需要沉积额外的开关层，这使得该系统的制造复杂性降低。直觉上认为氧化物层中氧原子的迁移是调节隧道结电阻的主要原因，但我们建议并非如此，相反，在界面处的电荷俘获/去俘获可能占主导切换功能。
更新日期：2020-10-28
中文翻译：
镓基液态金属/石墨烯结中的电阻切换观察
对于镓-铟/氧化镓/石墨烯结，观察到了电阻切换效应。使用镓基液态金属（LM）合金（在本例中是具有自然氧化镓皮的共晶镓-铟）直接提供了金属顶部触点和制造存储器所需的氧化物层。由于石墨烯的电特性，石墨烯被用作底部电极，重要的是，石墨烯可以防止形成合金，从而形成稳定的简单结。采用这种结构，高电阻状态（HRS）和低电阻状态（LRS）之间在0.5 V时的开/关比约为10 4在环境条件下。与其他电阻型随机存取存储器[RRAM]相比，不需要沉积额外的开关层，这使得该系统的制造复杂性降低。直觉上认为氧化物层中氧原子的迁移是调节隧道结电阻的主要原因，但我们建议并非如此，相反，在界面处的电荷俘获/去俘获可能占主导切换功能。
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