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Reversible Doping and Photo Patterning of Polymer Nanowires
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-13 , DOI: 10.1002/aelm.202000469 Zaira I. Bedolla‐Valdez 1 , Rui Xiao 2 , Camila Cendra 3 , Alice S. Fergerson 1 , Zekun Chen 1 , Goktug Gonel 1 , Alberto Salleo 3 , Dong Yu 2 , Adam J. Moulé 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-13 , DOI: 10.1002/aelm.202000469 Zaira I. Bedolla‐Valdez 1 , Rui Xiao 2 , Camila Cendra 3 , Alice S. Fergerson 1 , Zekun Chen 1 , Goktug Gonel 1 , Alberto Salleo 3 , Dong Yu 2 , Adam J. Moulé 1
Affiliation
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Recent development of dopant induced solubility control (DISC) patterning of polymer semiconductors has enabled direct‐write optical patterning of poly‐3‐hexylthiophene (P3HT) with diffraction limited resolution. Here, the optical DISC patterning technique to the most simple circuit element, a wire, is applied. Optical patterning of P3HT and P3HT doped with the molecular dopant 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F4TCNQ) wires with dimensions of 20–70 nm thickness, 200–900 nm width, and 40 μm length is demonstrated. In addition, optical patterning of wire patterns like “L” bends and “T” junctions without changing the diameter or thickness of the wires at the junctions is demonstrated. The wires themselves show up to 0.034 S cm‐1 conductance when sequentially doped. It is also demonstrated that a P3HT nanowire can be doped, de‐doped, and re‐doped from solution without changing the dimension of the wire. The combined abilities to optically pattern and reversibly dope a polymer semiconductor represents a full suite of patterning steps equivalent to photolithography for inorganic semiconductors.
中文翻译：
聚合物纳米线的可逆掺杂和光图案化
聚合物半导体的掺杂物诱导溶解度控制（DISC）图案的最新发展已使具有衍射极限分辨率的聚3-己基噻吩（P3HT）可以进行直接写入光学图案。在此，将光学DISC构图技术应用于最简单的电路元件（导线）。掺杂了分子掺杂剂2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷（F4TCNQ）的P3HT和P3HT的光学图案，尺寸为20-70 nm厚度，200-900 nm宽度和证明了40μm的长度。另外，展示了在不改变接合处的导线的直径或厚度的情况下，诸如“ L”形弯曲和“ T”形接合的导线图案的光学图案化。电线本身的最大显示值为0.034 S cm -1顺序掺杂时的电导。还证明了可以从溶液中掺杂，去掺杂和重掺杂P3HT纳米线，而无需更改线的尺寸。对聚合物半导体进行光学构图和可逆掺杂的综合能力代表了全套构图步骤，相当于无机半导体的光刻。
更新日期：2020-10-11
中文翻译：
聚合物纳米线的可逆掺杂和光图案化
聚合物半导体的掺杂物诱导溶解度控制（DISC）图案的最新发展已使具有衍射极限分辨率的聚3-己基噻吩（P3HT）可以进行直接写入光学图案。在此，将光学DISC构图技术应用于最简单的电路元件（导线）。掺杂了分子掺杂剂2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷（F4TCNQ）的P3HT和P3HT的光学图案，尺寸为20-70 nm厚度，200-900 nm宽度和证明了40μm的长度。另外，展示了在不改变接合处的导线的直径或厚度的情况下，诸如“ L”形弯曲和“ T”形接合的导线图案的光学图案化。电线本身的最大显示值为0.034 S cm -1顺序掺杂时的电导。还证明了可以从溶液中掺杂，去掺杂和重掺杂P3HT纳米线，而无需更改线的尺寸。对聚合物半导体进行光学构图和可逆掺杂的综合能力代表了全套构图步骤，相当于无机半导体的光刻。
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