Silicon nitride (SiN_x) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus (P) catalytic impurity doping (Cat-doping) are applied on textured crystalline silicon (c-Si) wafers with a pyramid size of 1–2 µm to reduce the surface recombination of minority carriers. SiN_x single layer passivation realizes a surface recombination velocity (SRV) of less than 10 cm/s. The addition of a P Cat-doped layer results in a reduction in a SRV to ~7 cm/s owing to field-effect passivation. These values are comparable to those obtained in our previous study for textured c-Si surface with larger-sized pyramids, indicating the high passivation ability of Cat-CVD SiN_x films and P Cat-doping independent of the size of pyramids. In addition to the double-side textured wafers, we also prepare a single-side textured wafer using Cat-CVD SiN_x as an etching barrier. We find that Cat-CVD SiN_x films can be utilized as an etching barrier against alkali solution, and a high effective minority carrier lifetime (τ_eff) of 2.3 ms has been obtained by the passivation with Cat-CVD SiN_x films. These achievements will contribute to an improvement in the performance of back-contact c-Si solar cells.

通过催化化学气相沉积（Cat-CVD）和磷（P）催化杂质掺杂（Cat掺杂）形成的氮化硅（SiN _x）膜应用于金字塔尺寸为1–的纹理晶体硅（c-Si）晶片上2 µm，以减少少数载流子的表面重组。SiN _x单层钝化实现了小于10 cm / s的表面复合速度（SRV）。由于场效应钝化，添加P Cat掺杂层会导致SRV降低至〜7 cm / s。这些值与我们先前的研究中获得的具有较大金字塔形的织构c-Si表面的值相当，表明Cat-CVD SiN _x具有很高的钝化能力胶片和P Cat掺杂与金字塔的大小无关。除了双面纹理化晶片之外，我们还使用Cat-CVD SiN _x作为蚀刻阻挡层来制备单面纹理化晶片。我们发现Cat-CVD SiN _x膜可以用作对碱溶液的蚀刻阻挡层，并且通过Cat-CVD SiN _x膜的钝化获得了2.3 ms的高效有效少数载流子寿命（_τeff）。这些成就将有助于改善背接触式c-Si太阳能电池的性能。