ABSTRACT Modulating electrical characteristics is essential to attain a progressive performance of electronic devices such as field effect transistors (FETs). Chemical doping is very beneficial technique which is so simple and cost effective than other methods used in electronic devices for improvement of electrical characteristics. Here we report the effect of chemical doping with dopant tetracyanoquinodimethane (TCNQ) for the multilayer (ML)-MoTe2 field effect transistor (FET) to control its electrical properties. The threshold voltage (Vth) is shifted from negative to positive back gate voltage which shows p-type doping, furthermore, it was confirmed by Raman spectroscopy, the peak A1g is shifted towards higher wave number showing p-type doping effect in MoTe2 FET. Moreover, the full width at half maximum (FWHM) is reduced and the intensity ratio of the characteristic peaks (A1g and E12g) is decreased with respect to reaction time. The electrical measurements revealed improved current on/off ratio from 105 to107, mobility from 26.2 cm2/V. s to 178.73 cm2/V. s and charge carrier density from 3.41x1012 cm-2 to 7.9 × 1012 cm-2. These results offer the possibility of employing MoTe2 FETs in electronics.

中文翻译：

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通过化学掺杂增强 MoTe2 场效应晶体管迁移率的简便途径

摘要 调制电气特性对于实现诸如场效应晶体管 (FET) 等电子设备的渐进性能至关重要。化学掺杂是一种非常有益的技术，与电子设备中用于改善电气特性的其他方法相比，它非常简单且具有成本效益。在这里，我们报告了用掺杂剂四氰基醌二甲烷 (TCNQ) 进行化学掺杂对多层 (ML)-MoTe2 场效应晶体管 (FET) 以控制其电性能的影响。阈值电压 (Vth) 从负向正背栅电压移动，显示 p 型掺杂，此外，拉曼光谱证实，峰 A1g 向更高波数移动，显示 MoTe2 FET 中的 p 型掺杂效应。而且，半峰全宽 (FWHM) 减小，特征峰 (A1g 和 E12g) 的强度比随反应时间而减小。电气测量显示电流开/关比从 105 提高到 107，迁移率从 26.2 cm2/V。s 至 178.73 cm2/V。s 和电荷载流子密度从 3.41x1012 cm-2 到 7.9 × 1012 cm-2。这些结果提供了在电子产品中使用 MoTe2 FET 的可能性。