Abstract This work analytically models the crucial physical mechanisms accountable for the defect kinetics and the degradation of base current in PNP BJTs. Both the space charge and bimolecular mechanisms have been incorporated to elicit the defect dynamics (oxide charge and interface trap) following ionization radiation. Thereafter, two novel insights into the ionization damage on SiO2 of bipolar structure are provided, which includes the coupled effect of the two defect mechanisms and the existence of an “additional” hydrogen sensitivity in the bimolecular mechanism. A previous device model has been updated to describe the response of base current degradation to defects build-up. Further, a closed-form compact expression for the excess base current is provided, which is an explicit function of the total ionizing dose, dose rate, and hydrogen concentration. The new model closely fits the experimental data from several devices, including RF25 capacitor, gate controlled lateral PNP BJT, and LM124 amplifier. Our model delivers a practical approach to deduct the oxide charge modulation effect on excess base current. Thereafter, the relation between the modified excess base current and total ionizing dose is linear. Furthermore, this work suggests a practical approach, called as “offset current approach”, to predict the excess base in PNP BJTs at low dose rate.

中文翻译：

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PNP BJT 中总电离剂量引起的过量基极电流的分析模型

摘要 这项工作对导致 PNP BJT 中的缺陷动力学和基极电流退化的关键物理机制进行了分析建模。空间电荷和双分子机制已被结合以引发电离辐射后的缺陷动力学（氧化物电荷和界面陷阱）。此后，提供了对双极结构 SiO2 电离损伤的两个新见解，包括两种缺陷机制的耦合效应和双分子机制中“额外”氢敏感性的存在。先前的器件模型已更新，以描述基极电流退化对缺陷累积的响应。此外，还提供了过量基极电流的封闭式紧凑表达式，它是总电离剂量、剂量率、和氢气浓度。新模型与多个器件的实验数据非常吻合，包括 RF25 电容器、栅极控制横向 PNP BJT 和 LM124 放大器。我们的模型提供了一种实用的方法来扣除氧化物电荷调制对过量基极电流的影响。此后，修正的过量基极电流和总电离剂量之间的关系是线性的。此外，这项工作提出了一种实用的方法，称为“偏移电流方法”，以预测低剂量率下 PNP BJT 中的过量碱。修正的过量基极电流与总电离剂量之间呈线性关系。此外，这项工作提出了一种实用的方法，称为“偏移电流方法”，以预测低剂量率下 PNP BJT 中的过量碱。修正的过量基极电流与总电离剂量之间呈线性关系。此外，这项工作提出了一种实用的方法，称为“偏移电流方法”，以预测低剂量率下 PNP BJT 中的过量碱。