Abstract Thin films of Cd1-xZnxS (CZS) nanostructures were prepared by chemical spray pyrolysis technique with different Zn-doping levels [(Cd1-xZnxS) in ‘x’ ratios of 0.00, 0.01, 0.03, 0.05 and 0.1 for 0%, 1%, 3%, 5% and 10 wt% of Zn respectively] on heated glass substrates at 350 °C. The effect of the Zn dopant on surface morphology and its effect on nonlinear optical (NLO) properties were investigated using atomic force microscopy (AFM) and Z-scan technique by Diode Pumped Solid State (DPSS) continuous-wave laser at 532 nm respectively. The surface roughness was found to be decreased with the increased Zn-doping on CdS. A significant red shift in the band edge and an increase in the transmittance of the films in the visible and NIR regions were also observed. The energy gap (Eg) of the prepared films was estimated and found to be enhanced by 3% i.e. in the range from 2.48 to 2.60 eV. The determined third-order NLO components such as nonlinear absorption coefficient (β), nonlinear refractive index ( n 2 ) and the susceptibility χ ( 3 ) were found to be in the range from 2.52 × 10−3 to 7.25 × 10−3 (cmW−1), 2.01 × 10−8 to 3.92 × 10−8 (cm2 W−1) and 1.30 × 10−6 to 2.67 × 10−6 (esu) respectively. The results indicate that NLO properties and photoluminescence of the prepared thin films can be tuned with surface morphology. This inspiring NLO results of Cd1-xZnxS thin film is a promising and capable material for optoelectronic device applications.

中文翻译：

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改进的 CdS 纳米结构薄膜的非线性光学吸收机制和磁化率 (χ(3))：锌掺杂的作用

摘要 采用化学喷雾热解技术制备了 Cd1-xZnxS (CZS) 纳米结构薄膜，具有不同的 Zn 掺杂水平 [(Cd1-xZnxS)，'x' 比为 0.00、0.01、0.03、0.05 和 0.1，分别为 0%、1 %, 3%, 5% 和 10 wt% 的 Zn] 在 350 °C 下加热的玻璃基板上。分别使用原子力显微镜 (AFM) 和二极管泵浦固态 (DPSS) 连续波激光器 (532 nm) 的 Z 扫描技术研究了 Zn 掺杂剂对表面形貌的影响及其对非线性光学 (NLO) 性能的影响。发现表面粗糙度随着 CdS 上 Zn 掺杂的增加而降低。还观察到带边缘的显着红移和薄膜在可见光和近红外区域的透射率增加。估计制备的薄膜的能隙（Eg）并发现提高了 3%，即在 2.48 至 2.60 eV 的范围内。发现确定的三阶 NLO 分量，例如非线性吸收系数 (β)、非线性折射率 (n 2 ) 和磁化率 χ ( 3 ) 的范围为 2.52 × 10-3 到 7.25 × 10-3 ( cmW−1)、2.01 × 10−8 到 3.92 × 10−8 (cm2 W−1) 和 1.30 × 10−6 到 2.67 × 10−6 (esu)。结果表明制备的薄膜的非线性光学特性和光致发光可以通过表面形貌进行调节。Cd1-xZnxS 薄膜的这种鼓舞人心的 NLO 结果是一种用于光电器件应用的有前途且功能强大的材料。发现非线性折射率 ( n 2 ) 和磁化率 χ ( 3 ) 范围为 2.52 × 10-3 至 7.25 × 10-3 (cmW-1)，2.01 × 10-8 至 3.92 × 10-8 (cm2 W−1) 和 1.30 × 10−6 到 2.67 × 10−6 (esu)。结果表明制备的薄膜的非线性光学特性和光致发光可以通过表面形貌进行调节。Cd1-xZnxS 薄膜的这种鼓舞人心的 NLO 结果是一种用于光电器件应用的有前途且功能强大的材料。发现非线性折射率 ( n 2 ) 和磁化率 χ ( 3 ) 范围为 2.52 × 10-3 至 7.25 × 10-3 (cmW-1)，2.01 × 10-8 至 3.92 × 10-8 (cm2 W−1) 和 1.30 × 10−6 到 2.67 × 10−6 (esu)。结果表明制备的薄膜的非线性光学特性和光致发光可以通过表面形貌进行调节。Cd1-xZnxS 薄膜的这种鼓舞人心的 NLO 结果是一种用于光电器件应用的有前途且功能强大的材料。