We present the VLS synthesis and photoluminescence characteristics of In₂ O₃ nanopyramids at different growth temperatures in oxygen deficient environment. TEM images showed preferential growth of [2 2 2] planes. XPS results confirmed oxygen vacancies and metallic indium, which affected the Raman modes and reduced the correlation length. The PL spectrum consisted a very strong band in visible region was resolved in two sub-bands centered at 622 nm and 668 nm corresponding to oxygen vacancies and indium interstitials, respectively. Temperature dependent PL behavior was normal in nanostructures grown at 875 °C and 760 °C, with activation energies of 6.60 meV and 5.02 meV, 6.69 meV and 4.26 meV for the two bands, respectively. A Berthelot-like PL response was observed in nanostructures grown at 830 °C, with escape energy of 4.12 meV and 0.53 meV and activation energy of 2.09 meV and 5.33 meV for the two bands, respectively.

我们介绍了In ₂ O ₃的VLS合成和光致发光特性缺氧环境中不同生长温度下的纳米金字塔。TEM图像显示[2 2 2]平面优先生长。XPS结果证实了氧空位和金属铟，这影响了拉曼模式并缩短了相关长度。PL光谱在可见光区域包含一个很强的谱带，并分解为两个分别位于622 nm和668 nm的子带，分别对应于氧空位和铟间隙。温度依赖性PL行为在875°C和760°C下生长的纳米结构中是正常的，两个谱带的活化能分别为6.60 meV和5.02 meV，6.69 meV和4.26 meV。在830℃生长的纳米结构中观察到了类似Berthelot的PL响应，两个带的逃逸能量分别为4.12meV和0.53meV，活化能为2.09meV和5.33meV。