This paper focuses on the design of a 2.3–21 GHz Distributed Low Noise Amplifier (LNA) with low noise figure (NF), high gain (S₂₁), and high linearity (IIP3) for broadband applications. This distributed amplifier (DA) includes S/C/X/Ku/K-band, which makes it very suitable for heterodyne receivers. The proposed DA uses a 0.18 μm GaAs pHEMT process (OMMIC ED02AH) in cascade architecture with lines adaptation and equalization of phase velocity techniques, to absorb their parasitic capacitances into the gate and drain transmission lines in order to achieve wide bandwidth and to enhance gain and linearity. The proposed broadband DA achieved an excellent gain in the flatness of 13.5 ± 0.2 dB, a low noise figure of 3.44 ± 1.12 dB, and a small group delay variation of ±19.721 ps over the range of 2.3–21 GHz. The input and output reflection coefficients S₁₁ and S₂₂ are less than −10 dB. The input compression point (P_1dB) and input third-order intercept point (IIP3) are −1.5 dBm and 11.5 dBm, respectively at 13 GHz. The dissipated power is 282 mW and the core layout size is 2.2 × 0.8 mm².

本文着重于设计具有低噪声系数（NF），高增益（S ₂₁）的2.3–21 GHz分布式低噪声放大器（LNA）），以及用于宽带应用的高线性度（IIP3）。该分布式放大器（DA）包含S / C / X / Ku / K频段，因此非常适合外差接收机。拟议的DA在级联架构中采用0.18μmGaAs pHEMT工艺（OMMIC ED02AH），采用线适应和相速度均衡技术，将其寄生电容吸收到栅极和漏极传输线中，以实现较宽的带宽并提高增益和线性。拟议中的宽带DA在2.3至21 GHz范围内的13.5±0.2 dB平坦度，3.44±1.12 dB的低噪声系数和小的群延迟变化（±19.721 ps）方面实现了出色的增益。输入和输出反射系数S ₁₁和S ₂₂小于-10 dB。输入压缩点（P_1dB）和输入三阶交调点（IIP3）在13 GHz时分别为-1.5 dBm和11.5 dBm。耗散功率为282 mW，磁芯布局尺寸为2.2×0.8 mm ²。