In situ transition electron microscopy (TEM) with its high-resolution imaging and analytic capability is playing an essential role in characterization and manipulation of nanoscale devices. This review article focuses on the application of in situ TEM in a wide range of advanced electronic devices for both fundamental physics study and real-time manipulation. These devices include transistors and non-volatile memory consisted of resistive random access memory, phase change memory, and ferroelectric resistive random access memory. We will show how in situ TEM is powerful in examining the structural evolution, change in chemical component, and devices reliability in atomic scale and real time.

原位过渡电子显微镜（TEM）具有高分辨率的成像和分析能力，在纳米级器件的表征和操作中起着至关重要的作用。本文将重点介绍原位TEM在众多用于基础物理研究和实时操纵的高级电子设备中的应用。这些设备包括晶体管和由电阻随机存取存储器，相变存储器和铁电电阻随机存取存储器组成的非易失性存储器。我们将展示原位TEM如何在原子尺度和实时研究结构演化，化学成分变化以及设备可靠性方面发挥强大作用。