Abstract The present paper focuses on proposing a new method for determining the surface roughness of chemically etched polishing of Si (100) using double disk magnetic abrasive finishing (DDMAF). Based on chemical etching in KOH solution Vicker’s hardness of Si (100) at different concentration of KOH was determined in context to chemical etching phenomenon. A mathematical relationship was established to relate Vicker’s hardness of Si (100) as a function of the concentration of KOH. The penetration depth of abrasive particle into Si (100) workpiece was determined considering viz; the normal force acting on the abrasive particle under the influence of magnetic flux density and Vicker’s hardness of etched Si (100). The other modeling variables such as wear constant, penetration area of the abrasive particle into Si (100) workpiece which is dependent on the penetration depth of abrasive particle was modified in terms of magnetic flux density and concentration of KOH. The process parameters such as working gap, abrasive mesh number and the rotational speed of the primary magnet were also considered in modeling the surface roughness. The results of surface roughness obtained by the model were also experimentally validated. The theoretical and experimental findings agreed well with each other.

中文翻译：

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使用双盘磁研磨精加工对 Si (100) 进行化学蚀刻抛光的表面粗糙度建模

摘要 本文的重点是提出一种使用双盘磁研磨抛光（DDMAF）测定Si（100）化学蚀刻抛光表面粗糙度的新方法。基于 KOH 溶液中的化学蚀刻，在化学蚀刻现象的背景下，确定了不同 KOH 浓度下 Si (100) 的维氏硬度。建立了数学关系以将 Si (100) 的维氏硬度与 KOH 浓度的函数联系起来。磨粒对Si（100）工件的渗透深度是考虑以下因素确定的；在磁通密度和蚀刻硅 (100) 维氏硬度的影响下作用在磨粒上的法向力。其他建模变量，如磨损常数，在磁通量密度和 KOH 浓度方面修改了磨料颗粒进入 Si (100) 工件的渗透面积，这取决于磨料颗粒的渗透深度。在模拟表面粗糙度时，还考虑了工艺参数，例如工作间隙、磨料网目数和​​初级磁铁的转速。模型得到的表面粗糙度结果也得到了实验验证。理论和实验结果相互吻合。模型得到的表面粗糙度结果也得到了实验验证。理论和实验结果相互吻合。模型得到的表面粗糙度结果也得到了实验验证。理论和实验结果相互吻合。