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High pressure growth and electron transport properties of superconducting SmFeAsO 1− x H x single crystals
Journal of Asian Ceramic Societies ( IF 2.2 ) Pub Date : 2017-09-01 , DOI: 10.1016/j.jascer.2017.06.009
Soshi Iimura 1 , Takashi Muramoto 1 , Satoru Fujitsu 2 , Satoru Matsuishi 2 , Hideo Hosono 1, 2
Affiliation  

Abstract We report the single crystal growth and characterization of the highest Tc iron-based superconductor SmFeAsO1−xHx. Some sub-millimeter-sized crystals were grown using the mixture flux of Na3As + 3NaH + As at 3.0 GPa and 1473 K. The chemical composition analyses confirmed 10% substitution of hydrogen for the oxygen site (x = 0.10), however, the structural analyses suggested that the obtained crystal forms a multi-domain structure. By using the FIB technique we fabricated the single domain SmFeAsO0.9H0.10 crystal with the Tc of 42 K, and revealed the metallic conduction in in-plane (ρab), while semiconducting in the out-of-plane (ρc). From the in-plane Hall coefficient measurements, we confirmed that the dominant carrier of SmFeAsO0.9H0.10 crystal is an electron, and the hydride ion occupied at the site of the oxygen ion effectively supplies a carrier electron per iron following the equation: O2− → H− + e−.

中文翻译:

超导 SmFeAsO 1− x H x 单晶的高压生长和电子传输特性

摘要 我们报告了最高 Tc 铁基超导体 SmFeAsO1−xHx 的单晶生长和表征。使用 Na3As + 3NaH + As 的混合通量在 3.0 GPa 和 1473 K 下生长了一些亚毫米尺寸的晶体。化学成分分析证实氧位点 (x = 0.10) 被氢取代了 10%,然而,结构分析表明所获得的晶体形成了多域结构。通过使用 FIB 技术,我们制造了 Tc 为 42 K 的单畴 SmFeAsO0.9H0.10 晶体,并揭示了面内 (ρab) 中的金属导电,而面外 (ρc) 中的半导体。从面内霍尔系数测量中,我们确认 SmFeAsO0.9H0.10 晶体的主要载流子是电子,
更新日期:2017-09-01
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