Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.

中文翻译：

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p-Si电化学刻蚀过程中孔隙成核特征

考虑了在阳极蚀刻 p-Si 期间形成多孔硅层的特征。显示了在 p-Si 和 n-Si 上形成纳米结构层的机制之间的根本区别。