Abstract We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.

中文翻译：

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通过 ALD 的发光 (Er,Ho)2O3 薄膜提高硅太阳能电池的性能

摘要 我们已经通过原子层沉积 (ALD) 制造了发光 (Er,Ho)2O3 薄膜，并研究了它们提高最先进单结 c-Si 双面太阳能电池性能的能力。薄膜通过三光子和两光子上转换过程转换红外光子（例如 1523 nm）以发射 400-700 nm 范围内的可见光。当薄膜与太阳能电池耦合时，在相当于 16 个太阳的模拟太阳激发下记录了约 3% 的短路电流密度改善（620 ± 5 至 638 ± 5 mAcm-2）。这些发现突出了 ALD 在设计和制造用于实际太阳能电池设备的发光涂层方面的潜力。