Organic field-effect transistors (OFETs) structured with a top-gate configuration have several advantages, such as better charge-carrier injection, easy gate line designing, and encapsulation or protection of devices, over those configured with a bottom-gate architecture. In particular, Poly (para-xylylene) (Parylene) -based polymer and its derivatives are considered suitable insulating materials for these transistors, due to thin film formation through a low-temperature vapor deposition process, superior barrier properties, and excellent dielectric characteristics. In this study, we analyzed two types of Parylene dielectrics (Parylene-C and Parylene -AF) considering their thin film formation process, surface, insulating, and OFET operation characteristics. Furthermore, we investigated the durability of the top-gate based OFETs composed of two polymer dielectrics while it was exposed to a UV/ozone environment. Also, we could fabricate UV/ozone durable top-gate OFETs composed by a bilayer with both Parylene dielectrics. We expect, therefore, that these results will help the selection and use of versatile dielectric layers for top-gate based OFETs.

与配置有底栅架构的那些相比，以顶栅配置构造的有机场效应晶体管（OFET）具有多个优点，例如更好的电荷载流子注入，容易的栅线设计以及器件的封装或保护。特别是Poly（para由于通过低温气相沉积工艺形成薄膜，优异的阻隔性能和出色的介电特性，因此，基于-亚二甲苯基（对二甲苯）的聚合物及其衍生物被认为是这些晶体管的合适绝缘材料。在这项研究中，我们分析了两种聚对二甲苯电介质（Parylene-C和Parylene -AF），考虑了它们的薄膜形成过程，表面，绝缘和OFET操作特性。此外，我们研究了由两种聚合物电介质组成的基于顶栅的OFET的耐用性，同时它暴露于紫外线/臭氧环境中。同样，我们可以制造由具有两种聚对二甲苯电介质的双层组成的耐紫外线/臭氧的耐用顶栅OFET。因此，我们期望