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Mobility of magnetic helicoid in holmium nano-layer
Current Applied Physics ( IF 2.4 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.cap.2020.09.002
R.S. Zavornitsyn , L.I. Naumova , M.A. Milyaev , M.V. Makarova , V.V. Proglyado , I.K. Maksimova , V.V. Ustinov

Abstract Spin valves with holmium layers and three-layer structures metal/Ho/metal were prepared by magnetron sputtering. A holmium layer in the spin valves is polycrystalline with weak axial texture. The structural coherence length along the hexagonal c-axis is approximately 2/5 of the total thickness of the holmium layer. Field dependences of the spin valves magnetoresistance were measured at different temperatures. Correlation was revealed between magnetic state in holmium layer and the shape of magnetoresistive curve. Deviation of magnetic moments of the reference layer and the adjacent part of holmium from the applied magnetic field was investigated. The field induced mobility of the magnetic helicoid in holmium layers was revealed.

中文翻译:

钬纳米层中磁性螺旋体的迁移率

摘要 采用磁控溅射制备了具有钬层和金属/Ho/金属三层结构的自旋阀。自旋阀中的钬层是具有弱轴向织构的多晶。沿六边形 c 轴的结构相干长度约为钬层总厚度的 2/5。在不同温度下测量自旋阀磁阻的场依赖性。揭示了钬层中的磁态与磁阻曲线形状之间的相关性。研究了参考层和钬的相邻部分的磁矩与外加磁场的偏差。揭示了钬层中磁性螺旋体的场致迁移率。
更新日期:2020-12-01
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