This study investigated the performance of graphene/silicon Schottky junction solar cells and presented two structures based on graphene diffraction gratings to significantly enhance the efficiency of the cells. Rectangular and staircase graphene gratings were employed as the junction pairs for silicon. The main structure and the proposed structures were then investigated at different temperatures, silicon thicknesses, and doping levels. The results showed that graphene grating significantly increased the internal electric field and width of the depletion region compared to the main structure. Moreover, the graphene-silicon interface area was increased at the contact point, consequently decreasing the dangling bonds. These regions also act as anti-reflectors and reduce the reflection of sunlight. The efficiency of the proposed structures, thanks to the aforementioned features, has been reported to be three-fold greater than the main structure. For instance, at the temperature of 300 K, doping level of 1 × 1017 cm−3 and silicon thickness of 500 nm, the short-circuit current, open-circuit voltage, fill factor, and efficiency of the main structure were obtained as 20.3 mA/cm2, 0.154 V, 57.3%, and 1.8%, respectively. For the same conditions, these figures were obtained as 22.4 mA/cm2, 0.398 V, 73%, and 6.54% for the rectangular graphene grating, and 20.8 mA/cm2, 0.397 V, 73%, and 6.08% for the staircase graphene grating, respectively.

中文翻译：

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使用衍射光栅提高石墨烯/硅肖特基结太阳能电池的效率

这项研究调查了石墨烯/硅肖特基结太阳能电池的性能，并提出了两种基于石墨烯衍射光栅的结构，以显着提高电池的效率。矩形和阶梯状石墨烯光栅被用作硅的结对。然后在不同的温度、硅厚度和掺杂水平下研究主要结构和提议的结构。结果表明，与主体结构相比，石墨烯光栅显着增加了内部电场和耗尽区的宽度。此外，石墨烯-硅界面面积在接触点处增加，从而减少了悬空键。这些区域还充当抗反射器并减少阳光的反射。拟议结构的效率，由于上述特点，据报道比主体结构大三倍。例如，在温度为 300 K、掺杂水平为 1 × 1017 cm-3 和硅厚度为 500 nm 时，主体结构的短路电流、开路电压、填充因子和效率为 20.3 mA/cm2、0.154 V、57.3% 和 1.8% 分别。在相同条件下，矩形石墨烯光栅为 22.4 mA/cm2、0.398 V、73% 和 6.54%，楼梯石墨烯光栅为 20.8 mA/cm2、0.397 V、73% 和 6.08% ， 分别。主要结构的填充因子和效率分别为 20.3 mA/cm2、0.154 V、57.3% 和 1.8%。在相同条件下，矩形石墨烯光栅为 22.4 mA/cm2、0.398 V、73% 和 6.54%，楼梯石墨烯光栅为 20.8 mA/cm2、0.397 V、73% 和 6.08% ， 分别。主要结构的填充因子和效率分别为 20.3 mA/cm2、0.154 V、57.3% 和 1.8%。在相同条件下，矩形石墨烯光栅为 22.4 mA/cm2、0.398 V、73% 和 6.54%，楼梯石墨烯光栅为 20.8 mA/cm2、0.397 V、73% 和 6.08% ， 分别。