Ni/Al2O3/GaN structures with vicinal GaN surfaces from the c- or m-plane were formed. Then, electrical interface properties of the structures were systematically investigated. It was found that interface state density (Dit) at the Al2O3/GaN interface for the c-plane is higher than that for the m-plane, and post-metallization annealing is quite effective to reduce Dit for both c- and m-planes. As a result, the low Dit value of ∼ 3 × 1010 eV−1 cm−2 was demonstrated for both planes.

中文翻译：

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在相邻极性和非极性表面上形成的 Al2O3/GaN 界面处的低界面态密度

形成了具有来自 c 面或 m 面的邻位 GaN 表面的 Ni/Al2O3/GaN 结构。然后，系统地研究了结构的电界面特性。发现 c 面 Al2O3/GaN 界面的界面态密度 (Dit) 高于 m 面，并且金属化后退火对于降低 c 面和 m 面的 Dit 非常有效. 结果，两个平面都证明了 ~ 3 × 1010 eV-1 cm-2 的低 Dit 值。