This work presents the results of magnetotransport measurements performed on a 156 nm-thick Bi2Te3 epitaxial film in the temperature range of 1.9–300 K, showing Shubnikov–de Haas oscillations for temperatures below 50 K. A detailed analysis of oscillations as a function of temperature provides the main transport parameters, including the Lande g-factor and cyclotronic masses. A systematic analysis of fast Fourier transform, performed on the oscillations, indicates that the origin of the oscillation pattern is not related to the topological surface states but from the Rashba splitting of the Bi2Te3 Fermi surface.

中文翻译：

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Bi2Te3 外延膜中的 Shubnikov-de Haas 振荡和 Rashba 分裂

这项工作展示了在 1.9-300 K 的温度范围内对 156 nm 厚的 Bi2Te3 外延膜进行的磁传输测量结果，显示了温度低于 50 K 时的 Shubnikov-de Haas 振荡。 作为温度函数的振荡的详细分析提供主要传输参数，包括朗德 g 因子和回旋质量。对振荡进行的快速傅立叶变换的系统分析表明，振荡模式的起源与拓扑表面状态无关，而是来自 Bi2Te3 费米表面的 Rashba 分裂。