Growth of Mg-doped GaN on trench-patterned GaN films consists of competing lateral and vertical growth fronts that result in regions with different electronic properties. Under typical growth conditions, lateral growth from the trench sidewall occurs at a faster rate than vertical growth from the trench base. When the trench width is sufficiently narrow, the growth fronts from opposite sidewalls coalesce and lead to eventual planarization of the top surface. Secondary electron imaging and cathodoluminescence mapping are used to correlate the morphology and the optical properties of regions resulting from lateral and vertical growth. For our growth conditions, the lateral-to-vertical growth rate ratio is found to be about 2.

中文翻译：

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在沟槽图案化 GaN 薄膜上横向和垂直生长 Mg 掺杂的 GaN

在沟槽图案化 GaN 薄膜上生长掺杂 Mg 的 GaN 由相互竞争的横向和垂直生长前沿组成，这些前沿导致具有不同电子特性的区域。在典型的生长条件下，沟槽侧壁的横向生长速度比沟槽底部的垂直生长速度快。当沟槽宽度足够窄时，来自相对侧壁的生长前沿会合并并最终导致顶面平坦化。二次电子成像和阴极发光映射用于关联横向和纵向生长区域的形态和光学特性。对于我们的生长条件，发现横向与纵向的增长率比约为 2。