We show that ideal memristors—devices whose resistance is proportional to the charge that flows through them—can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid state of thin-film heterostructures with frustrated exchange, where the memristive response is tunable by proximity to the glass transition, while current-induced Joule heating facilitates non-volatile operation and second-order memristive functionality beneficial for neuromorphic applications. Ideal memristive behaviors can be achieved in other systems characterized by viscous dynamics of physical, electronic, or magnetic degrees of freedom.

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基于自旋力矩驱动的粘性磁化动力学的理想忆阻器

我们展示了理想的忆阻器——电阻与流过它们的电荷成正比的器件——可以使用自旋扭矩驱动的粘性磁化动力学来实现。后者可以在具有受阻交换的薄膜异质结构的自旋液态下完成，其中忆阻响应可通过接近玻璃化转变进行调节，而电流诱导的焦耳热促进非易失性操作和二阶忆阻功能有益用于神经形态应用。理想的忆阻行为可以在以物理、电子或磁自由度的粘性动力学为特征的其他系统中实现。