A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in lateral MOSFETs is investigated and two separated trapping mechanisms were found. One mechanism is nearly temperature independent and it is correlated to the presence of near interface oxide traps that are trapped via tunneling from the semiconductor. The second mechanism, having an activation energy of 0.1 eV, has been correlated to the presence of intrinsic defects at the SiO$_2$/4H-SiC interface.

中文翻译：

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确定导致 SiO2/4H-SiC MOSFET 阈值电压变化的两种捕获机制

使用基于循环栅极偏置应力的非弛豫方法在整个 4H-SiC 带隙上探测 SiO$_2$/4H-SiC 系统中的界面或近界面陷阱。研究了横向 MOSFET 中阈值电压的温度依赖性不稳定性，并发现了两个独立的俘获机制。一种机制几乎与温度无关，并且与近界面氧化物陷阱的存在相关，这些氧化物陷阱通过半导体的隧道效应被捕获。第二种机制具有 0.1 eV 的活化能，与 SiO$_2$/4H-SiC 界面处存在固有缺陷有关。