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Gallium-Doped Zinc Oxide Nanoparticle Thin Films as Transparent Electrode Materials with High Conductivity
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1021/acsanm.0c01471 Yasutaka Nishi 1, 2 , Yuki Kasai 1 , Ryoko Suzuki 1, 2 , Masaki Matsubara 1, 3 , Atsushi Muramatsu 1 , Kiyoshi Kanie 1
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1021/acsanm.0c01471 Yasutaka Nishi 1, 2 , Yuki Kasai 1 , Ryoko Suzuki 1, 2 , Masaki Matsubara 1, 3 , Atsushi Muramatsu 1 , Kiyoshi Kanie 1
Affiliation
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Gallium-doped zinc oxide (GZO) nanoparticles (NPs) have been synthesized by a solvothermal synthesis method using gallium chloride and zinc chloride as precursors in anhydrous methanol along with bases. Systematic investigations have revealed that H2O, formed through the condensation of metal hydroxides to obtain GZO NPs, not only enhances the production of layered compounds as byproducts but also accelerates Ostwald ripening to reduce the amount of doped gallium ions. To overcome H2O generation during NP growth, we first applied sodium methoxide (NaOMe) as a base for the synthesis of GZO NPs. As a result, high-performance GZO NPs were successfully obtained in a single phase, and the mean particle size of the GZO NPs was controlled from 10 to 35 nm by changing the molar ratio of the sodium hydroxide (NaOH) and NaOMe in the reaction mixture. We further applied the obtained GZO NPs to prepare GZO NP-based transparent conductive metal oxide (TCO) films using an NP-mist deposition strategy as our developed NP-coating method on substrates. The resistivity and transparency of the deposited GZO thin films were compared with those of conventional thin films prepared by a dispersion coating method, showing that NP-mist deposition is a promising method for fabricating high-performance GZO NP-based TCO thin films on substrates under mild atmospheric conditions.
中文翻译：
掺杂镓的氧化锌纳米颗粒薄膜作为高电导率透明电极材料
镓掺杂的氧化锌（GZO）纳米颗粒（NPs）已通过溶剂热合成方法合成，使用氯化镓和氯化锌作为前体在无水甲醇中与碱一起形成。系统研究表明，通过金属氢氧化物的缩合反应获得GZO NPs形成的H 2 O不仅提高了作为副产物的层状化合物的产量，而且还加速了奥斯特瓦尔德（Ostwald）熟化以减少掺杂镓离子的量。克服H 2在NP生长期间产生O，我们首先应用甲醇钠（NaOMe）作为合成GZO NP的基础。结果，成功地在单相中获得了高性能的GZO NP，并且通过改变反应中氢氧化钠（NaOH）和NaOMe的摩尔比，将GZO NP的平均粒径控制在10至35 nm之间。混合物。我们进一步将获得的GZO NPs用于制备基于GZO NP的透明导电金属氧化物（TCO）薄膜，该薄膜使用NP-mist沉积策略作为我们在基材上开发的NP涂覆方法。将沉积的GZO薄膜的电阻率和透明度与通过分散涂覆法制备的常规薄膜的电阻率和透明度进行比较，
更新日期：2020-10-25
中文翻译：
掺杂镓的氧化锌纳米颗粒薄膜作为高电导率透明电极材料
镓掺杂的氧化锌（GZO）纳米颗粒（NPs）已通过溶剂热合成方法合成，使用氯化镓和氯化锌作为前体在无水甲醇中与碱一起形成。系统研究表明，通过金属氢氧化物的缩合反应获得GZO NPs形成的H 2 O不仅提高了作为副产物的层状化合物的产量，而且还加速了奥斯特瓦尔德（Ostwald）熟化以减少掺杂镓离子的量。克服H 2在NP生长期间产生O，我们首先应用甲醇钠（NaOMe）作为合成GZO NP的基础。结果，成功地在单相中获得了高性能的GZO NP，并且通过改变反应中氢氧化钠（NaOH）和NaOMe的摩尔比，将GZO NP的平均粒径控制在10至35 nm之间。混合物。我们进一步将获得的GZO NPs用于制备基于GZO NP的透明导电金属氧化物（TCO）薄膜，该薄膜使用NP-mist沉积策略作为我们在基材上开发的NP涂覆方法。将沉积的GZO薄膜的电阻率和透明度与通过分散涂覆法制备的常规薄膜的电阻率和透明度进行比较，
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