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Thermal Evaporation–Oxidation Deposited Aluminum Oxide as an Interfacial Modifier to Improve the Performance and Stability of Zinc Oxide-Based Planar Perovskite Solar Cells
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-09-11 , DOI: 10.1021/acsaem.0c01106 Carlos A. Rodríguez-Castañeda 1 , Paola M. Moreno-Romero 1 , Asiel N. Corpus-Mendoza 1, 2 , Guillermo Suárez-Campos 3 , Margarita Miranda-Hernández 1 , Mérida Sotelo-Lerma 3 , Hailin Hu 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-09-11 , DOI: 10.1021/acsaem.0c01106 Carlos A. Rodríguez-Castañeda 1 , Paola M. Moreno-Romero 1 , Asiel N. Corpus-Mendoza 1, 2 , Guillermo Suárez-Campos 3 , Margarita Miranda-Hernández 1 , Mérida Sotelo-Lerma 3 , Hailin Hu 1
Affiliation
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The acid–base chemistry at the interface of zinc oxide (ZnO) and methylammonium lead tri-iodide (perovskite) leads to a proton transfer reaction that results in perovskite degradation. In perovskite solar cells (PSCs), this reaction produces low efficiency and reduces the long-term stability. In this work, an aluminum (Al) layer of 1–2 nm thickness is thermally evaporated on top of ZnO or Al3+-doped ZnO (ZnO:Al) thin films and then annealed at 450 °C for 30 min. Thermal annealing converts the surface aluminum film into a transparent and approximately 2 nm thick aluminum oxide (AlOx) layer. Also, a larger concentration of oxygen vacancies is obtained by the annealing of Al and attributed to the diffusion of Al into the ZnO surface, and the ZnO underlayer results in a more conductive material. As a result, the chemical stability of perovskite coatings on top of AlOx-coated ZnO films is significantly enhanced, and the flat-band level of ZnO shifts 0.09 eV upwards, which improves the energetic level alignment in PSCs. This allows us to obtain ZnO:Al/AlOx-based planar PSCs that show a maximum efficiency of 16.56% with the perovskite layer prepared in ambient conditions under a relative humidity of 40–50%. After continuous illumination of about 30 min in air, ZnO-based PSCs without AlOx layer retain only 34.5% of their original efficiency, whereas those with AlOx retain about 92.5%. It is demonstrated that thermal evaporation–oxidation is an efficient method to modify the surface properties of inorganic semiconductor thin films and improves both the performance and stability of PSCs.
中文翻译：
热蒸发氧化沉积的氧化铝作为界面改性剂，可改善基于氧化锌的平面钙钛矿太阳能电池的性能和稳定性
氧化锌（ZnO）和甲基铵三碘化铅（钙钛矿）界面处的酸碱化学性质导致质子转移反应，导致钙钛矿降解。在钙钛矿太阳能电池（PSC）中，此反应效率低，并降低了长期稳定性。在这项工作中，将厚度为1-2 nm的铝（Al）层热蒸发到ZnO或掺有Al 3+的ZnO（ZnO：Al）薄膜上，然后在450°C下退火30分钟。热退火将表面铝膜转换成透明的约2 nm厚的氧化铝（AlO x）层。而且，通过Al的退火获得较大浓度的氧空位，这归因于Al向ZnO表面的扩散，并且ZnO底层导致导电性更高的材料。结果，AlO x涂层的ZnO薄膜顶部的钙钛矿涂层的化学稳定性得到显着增强，并且ZnO的带状能级向上移动0.09 eV，这改善了PSC中的能级能级。这使我们可以获得基于ZnO：Al / AlO x的平面PSC，在环境条件下，相对湿度为40％至50％的条件下制备钙钛矿层时，其最大效率为16.56％。在空气中连续照明约30分钟后，不含AlO x的基于ZnO的PSC层仅保留其原始效率的34.5％，而具有AlO x的层保留约92.5％。结果表明，热蒸发氧化是一种有效的方法，可以改变无机半导体薄膜的表面性能，并改善PSC的性能和稳定性。
更新日期：2020-10-26
中文翻译：
热蒸发氧化沉积的氧化铝作为界面改性剂，可改善基于氧化锌的平面钙钛矿太阳能电池的性能和稳定性
氧化锌（ZnO）和甲基铵三碘化铅（钙钛矿）界面处的酸碱化学性质导致质子转移反应，导致钙钛矿降解。在钙钛矿太阳能电池（PSC）中，此反应效率低，并降低了长期稳定性。在这项工作中，将厚度为1-2 nm的铝（Al）层热蒸发到ZnO或掺有Al 3+的ZnO（ZnO：Al）薄膜上，然后在450°C下退火30分钟。热退火将表面铝膜转换成透明的约2 nm厚的氧化铝（AlO x）层。而且，通过Al的退火获得较大浓度的氧空位，这归因于Al向ZnO表面的扩散，并且ZnO底层导致导电性更高的材料。结果，AlO x涂层的ZnO薄膜顶部的钙钛矿涂层的化学稳定性得到显着增强，并且ZnO的带状能级向上移动0.09 eV，这改善了PSC中的能级能级。这使我们可以获得基于ZnO：Al / AlO x的平面PSC，在环境条件下，相对湿度为40％至50％的条件下制备钙钛矿层时，其最大效率为16.56％。在空气中连续照明约30分钟后，不含AlO x的基于ZnO的PSC层仅保留其原始效率的34.5％，而具有AlO x的层保留约92.5％。结果表明，热蒸发氧化是一种有效的方法，可以改变无机半导体薄膜的表面性能，并改善PSC的性能和稳定性。
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