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A low‐power delay stage ring VCO based on wrap‐gate CNTFET technology for X‐band satellite communication applications
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2020-09-12 , DOI: 10.1002/cta.2864 Mohammad Khaleqi Qaleh Jooq 1 , Ali Bozorgmehr 2 , Sattar Mirzakuchaki 3
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2020-09-12 , DOI: 10.1002/cta.2864 Mohammad Khaleqi Qaleh Jooq 1 , Ali Bozorgmehr 2 , Sattar Mirzakuchaki 3
Affiliation
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Over the past few years, with lower power consumption, reasonable layout area, and the ease of integration with standard circuit design technologies compared to the other counterparts, delay stage ring voltage‐controlled oscillators (VCOs) have been in the limelight of microelectronics scientists. However, few efforts have focused on representing high‐performance delay stage ring VCOs in the deep nanometric regime. In this regard, by virtue of outstanding electrical properties of carbon nanotube wrap‐gate transistors, this work aims to propose a carbon nanotube field‐effect transistor (CNTFET)–based delay stage ring VCO. After performing rigorous simulations, the proposed ring VCO which has been designed by 10‐nm gate‐all‐around (GAA) CNTFET technology shows suitable electrical performance metrics. The simulation results demonstrate that the proposed GAA‐CNTFET‐based ring VCO consumes 85.176 μW at 
with a 6.12‐ to 10.42‐GHz frequency tuning range. At the worst‐case noise conditions, the proposed design presents ‐90.747 dBc/Hz phase noise at 1 MHz offset frequency. With occupying 1.414 μm2 physical area, the proposed VCO is appropriate for the ultracompact nanoscale radio frequency apparatus. Our simulation results accentuate that with further improvements and commercializing the fabrication techniques for CNTFET transistors, the proposed GAA‐CNTFET‐based VCO can be considered as a potential candidate for X‐band satellite communication applications.
中文翻译：
基于环绕门CNTFET技术的低功耗延迟级环形VCO，用于X波段卫星通信应用
在过去的几年中，与其他同类产品相比，延迟级环形压控振荡器（VCO）具有更低的功耗，合理的布局面积以及与标准电路设计技术的集成简便性，已成为微电子科学家的关注焦点。但是，很少有工作专注于在深纳米范围内表示高性能延迟级环形VCO。在这方面，凭借碳纳米管环绕栅晶体管的出色电性能，这项工作旨在提出一种基于碳纳米管场效应晶体管（CNTFET）的延迟级环VCO。在进行严格的仿真之后，由10nm环栅（GAA）CNTFET技术设计的拟议环形VCO显示出合适的电气性能指标。85.176 μ w ^在与6.12-至10.42 GHz的频率调谐范围。在最坏情况下的噪声条件下，建议的设计在1 MHz偏移频率下呈现‐90.747 dBc / Hz的相位噪声。与占据1.414 μ中号2的物理区域，所提出的压控振荡器适合于超小型纳米级的射频设备。我们的仿真结果突显出，随着CNTFET晶体管的制造技术的进一步改进和商业化，所提出的基于GAA-CNTFET的VCO可被视为X波段卫星通信应用的潜在候选者。
更新日期：2020-09-12
with a 6.12‐ to 10.42‐GHz frequency tuning range. At the worst‐case noise conditions, the proposed design presents ‐90.747 dBc/Hz phase noise at 1 MHz offset frequency. With occupying 1.414 μm2 physical area, the proposed VCO is appropriate for the ultracompact nanoscale radio frequency apparatus. Our simulation results accentuate that with further improvements and commercializing the fabrication techniques for CNTFET transistors, the proposed GAA‐CNTFET‐based VCO can be considered as a potential candidate for X‐band satellite communication applications.
中文翻译：
基于环绕门CNTFET技术的低功耗延迟级环形VCO，用于X波段卫星通信应用
在过去的几年中，与其他同类产品相比，延迟级环形压控振荡器（VCO）具有更低的功耗，合理的布局面积以及与标准电路设计技术的集成简便性，已成为微电子科学家的关注焦点。但是，很少有工作专注于在深纳米范围内表示高性能延迟级环形VCO。在这方面，凭借碳纳米管环绕栅晶体管的出色电性能，这项工作旨在提出一种基于碳纳米管场效应晶体管（CNTFET）的延迟级环VCO。在进行严格的仿真之后，由10nm环栅（GAA）CNTFET技术设计的拟议环形VCO显示出合适的电气性能指标。85.176 μ w ^在
与6.12-至10.42 GHz的频率调谐范围。在最坏情况下的噪声条件下，建议的设计在1 MHz偏移频率下呈现‐90.747 dBc / Hz的相位噪声。与占据1.414 μ中号2的物理区域，所提出的压控振荡器适合于超小型纳米级的射频设备。我们的仿真结果突显出，随着CNTFET晶体管的制造技术的进一步改进和商业化，所提出的基于GAA-CNTFET的VCO可被视为X波段卫星通信应用的潜在候选者。
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