Semiconductor thin films in solar cells have earned much attention in the past few decades in renewable energy production via solar energy. Antimony-Diethyl dithiocarbamate complex of formula [Sb(S₂CN(Et)₂)_n] have been synthesized and utilized as a precursor for the deposition of pure and Copper doped Antimony Sulphide on glass substrates as thin films by using Physical Vapor Deposition method (PVD) via resistive heating unit (RHU). FTIR studies confirmed the development of dithiocarbamate complexes. To the best of our cognition, physical vapour deposition method is applied for the first time in the fabrication of pure and doped Antimony Sulphide thin film.

在过去的几十年中，太阳能电池中的半导体薄膜在通过太阳能生产可再生能源方面赢得了很多关注。合成了式[Sb（S ₂ CN（Et）₂）_n ]的锑-二乙基二硫代氨基甲酸盐配合物，并利用物理气相沉积法将其作为前驱体在玻璃基板上以薄膜形式沉积了纯铜掺杂的硫化锑。 （PVD）通过电阻加热单元（RHU）。FTIR研究证实了二硫代氨基甲酸酯配合物的发展。据我们所知，物理气相沉积方法首次应用于纯净和掺杂的硫化锑薄膜的制造中。