Exfoliating g-C₃N₄ into 2D nanosheet to minimize the stacking layer for the improvement of charge transfer and separation is considered to be the effective measure to enhance its photocatalytic performance. However, no matter what method is used, the exfoliated g-C₃N₄ nanosheet shows decreased optical absorption compared to the pristine bulk-like one. In this work, a simple one-step sulfur doping method is proposed on the basis of exfoliated g-C₃N₄ nanosheet, which can directly regulate the band structure of g-C₃N₄ and enhance its optical absorption ability. The proposed sulfur doping method redshift the light absorption edge of g-C₃N₄ nanosheet to the level of pristine bulk-like g-C₃N₄, and even induce the generation of a new n→π* absorption band. In addition, the introduced sulfur doping site can form a local electron accumulation point, so that to further improve the charge separation efficiency and surface charge transfer ability of g-C₃N₄ nanosheets.

将gC ₃ N ₄剥离到2D纳米片中以最小化堆叠层以改善电荷转移和分离被认为是增强其光催化性能的有效措施。然而，无论使用哪种方法，与原始的大块状薄片相比，剥落的gC ₃ N ₄纳米薄片都显示出降低的光吸收。在这项工作中，基于剥离的gC ₃ N ₄纳米片，提出了一种简单的一步硫掺杂方法，该方法可以直接调节gC ₃ N ₄的能带结构。并增强其光吸收能力。拟议的硫掺杂方法将gC ₃ N ₄纳米片的光吸收边缘重新移至原始的块状gC ₃ N _4的水平，甚至诱导产生新的n→π*吸收带。另外，引入的硫掺杂位点可以形成局部电子积累点，从而进一步提高gC ₃ N ₄纳米片的电荷分离效率和表面电荷转移能力。