A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. The effect of varying key parameters on the conversion efficiency is investigated. The simulations are performed using COMSOL Multiphysics software. The mobilities of electrons and holes are varied in combination with the lifetime (LT). As a result, a maximum efficiency of 10.81% is achieved by setting the electron and hole mobility to 1.5k cm² V⁻¹ s⁻¹ and 0.3k cm² V⁻¹ s⁻¹, respectively. The electron and hole carrier LT are 3 ns and 7 ns, respectively, for the maximum output. The effect of the surface recombination velocity (SRV) is also studied, and a maximum efficiency of 13.75% is achieved for an SRV of 1k ms⁻¹ for electrons and holes. The results show that higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

本文提出了具有PIN结构的基于GaAs的太阳能电池的理论模型。研究了关键参数变化对转换效率的影响。使用COMSOL Multiphysics软件进行仿真。电子和空穴的迁移率随寿命（LT）而变化。结果，通过将电子和空穴迁移率设置为1.5k cm ²  V ^-1  s ^-1和0.3k cm ²  V ^-1  s ^-1可获得最大效率10.81％， 分别。对于最大输出，电子和空穴载流子LT分别为3 ns和7 ns。还研究了表面复合速度（SRV）的影响，对于电子和空穴的1k ms ^-1的SRV，最大效率为13.75％。结果表明，通过增加迁移率和载体LT，同时降低表面复合速度，可以实现更高的光伏效率。