This work reports the changes in the properties of Ag-doped SnS thin films (SnS:Ag), and CdS/SnS solar cells with an Ag dopant concentration in the absorber varied from 0 to 6 wt.% in steps of 3 wt.% prepared by the nebulizer-assisted spray pyrolysis method (NSP). X-ray diffraction (XRD) studies confirm the SnS:Ag (3 wt.%) thin film has a higher crystallite size than the undoped and SnS:Ag (6 wt.%) thin film. An atomic force microscope (AFM) image shows SnS:Ag (3 wt.%) film possesses larger-sized grains than other samples. The energy-dispersive X-ray analysis (EDS) confirms the presence of the constituent elements in the SnS:Ag thin films. PL analysis revealed the films possess the band edge as well as the other defect-related emissions of SnS. The Ag doping facilitates the tunability in absorption and decreases in optical bandgap for the SnS:Ag (3 wt.%) film. Hall measurements provide the low resistivity of 3.31 Ωcm, the high charge carrier concentration of 1.56 × 1017 cm−3, and high mobility of 12.1 cm2 V−1 s−1 for 3 wt.% Ag-doped SnS film. The better photovoltaic conversion efficiency of 0.285% was observed for the device prepared with SnS:Ag (3 wt.%) thin film compared to other samples due to enhanced absorption, optimum bandgap, and better electrical properties.

中文翻译：

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用于太阳能电池应用的 Ag 掺杂 SnS 薄膜的定量分析

这项工作报告了 Ag 掺杂的 SnS 薄膜 (SnS:Ag) 和 CdS/SnS 太阳能电池的性能变化，其中吸收剂中的 Ag 掺杂浓度从 0 到 6 wt.%，步长为 3 wt.%通过雾化器辅助喷雾热解法 (NSP) 制备。X 射线衍射 (XRD) 研究证实 SnS:Ag (3 wt.%) 薄膜比未掺杂和 SnS:Ag (6 wt.%) 薄膜具有更高的微晶尺寸。原子力显微镜 (AFM) 图像显示 SnS:Ag (3 wt.%) 薄膜比其他样品具有更大尺寸的晶粒。能量色散 X 射线分析 (EDS) 证实了 SnS:Ag 薄膜中存在组成元素。PL 分析显示薄膜具有带边以及其他与缺陷相关的 SnS 发射。Ag 掺杂促进了 SnS 吸收的可调性和光学带隙的减小：Ag (3 wt.%) 薄膜。霍尔测量提供 3.31 Ωcm 的低电阻率、1.56 × 1017 cm-3 的高电荷载流子浓度和 12.1 cm2 V-1 s-1 的高迁移率，用于 3 wt.% Ag 掺杂的 SnS 薄膜。由于增强的吸收、最佳带隙和更好的电性能，与其他样品相比，使用 SnS:Ag (3 wt.%) 薄膜制备的器件具有更好的光伏转换效率，为 0.285%。