ABSTRACT Pure and Mg-doped ZnO films have been successfully grown on indium-doped tin oxide (ITO) substrates by simple chemical spray pyrolysis and their crystallographic properties characterised using X-ray diffraction (XRD) measurements in the range . The XRD measurements revealed that all samples have a hexagonal wurtzite crystal structure and a polycrystalline nature. The structural parameters of the samples were evaluated as a function of Mg content. The electrical properties of the films were evaluated using electrochemical impedance spectroscopy measurements. The circuit parameters were obtained by an equivalent circuit model presuming certain corrosion features of the synthesised films. Additionally, open-circuit potentials and the Bode approximation were used to create a correlation between structural changes resulting from Mg content addition and the variation in the corrosion behaviour of the films.

中文翻译：

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ZnO 薄膜的电化学阻抗谱分析：Mg 掺杂的影响

摘要 通过简单的化学喷雾热解，在掺铟氧化锡 (ITO) 衬底上成功生长了纯和掺镁的 ZnO 薄膜，并使用 X 射线衍射 (XRD) 测量范围内的 X 射线衍射 (XRD) 测量表征了它们的晶体学特性。XRD 测量表明所有样品都具有六方纤锌矿晶体结构和多晶性质。样品的结构参数被评估为镁含量的函数。使用电化学阻抗谱测量评估薄膜的电性能。电路参数是通过等效电路模型获得的，假设合成膜具有某些腐蚀特征。此外，