ABSTRACT In the framework of dipole approximation, it is shown that the quantities (the oscillator strengths of transitions, the dipole moments for transitions, and the polarizability) describing optical absorption on surface exciton states with spatially separated electrons and holes (the hole moves in the germanium quantum dot and the electron is localised over the spherical interface of the silicon quantum dot matrix) assume giant values considerably exceeding the typical values of the corresponding quantities for semiconductors under the action of low-intensity light.

中文翻译：

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Ge/Si异质结构中具有空间分离电子和空穴的锗量子点的极化率

摘要 在偶极子近似的框架中，表明描述具有空间分离的电子和空穴的表面激子态上的光吸收的量（跃迁的振子强度、跃迁的偶极矩和极化率）（空穴在在低强度光的作用下，锗量子点和电子位于硅量子点矩阵的球形界面上）假定大大超过了半导体相应量的典型值。