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IMPROVING THE QUALITY OF PHOTODETECTORS USING ISOTOPIC NANOENGINEERING METHODS
Nanotechnologies in Russia Pub Date : 2020-01-09 , DOI: 10.1134/s1995078019020149
L. M. Zhuravleva , N. M. Legkii

Abstract—The study considers the possibility of changing the isotopic composition of a substance to improve the physical properties of the material and the optoelectronic characteristics of a photodetector as the most common device in optoelectronics. It is shown that the reduction of heavy isotopes in the semiconductor material of photodetectors increases the mobility of charge carriers, the light absorption coefficient, and quantum efficiency, while reducing the number of band gap sublevels that affect the dark current. This increases the photodetector sensitivity, decreases the magnitude of the dark current, and improves the signal power to noise power ratio at the output of the photodetector. Technologies for improving the properties of a material by improving the characteristics of bulk semiconductor crystals, multiple quantum wells, and superlattices are compared.

中文翻译:

使用同位素纳米工程方法提高光检测剂的质量

摘要这项研究考虑了改变一种物质的同位素组成来改善材料的物理特性和光电探测器最常见的光电探测器的光电特性的可能性。结果表明,光电探测器半导体材料中重同位素的减少增加了载流子的迁移率,光吸收系数和量子效率,同时减少了影响暗电流的带隙子能级数。这增加了光电探测器的灵敏度,减小了暗电流的幅度,并改善了光电探测器输出端的信号功率与噪声功率之比。通过改善体半导体晶体,多量子阱,
更新日期:2020-01-09
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