Abstract—At present, atomic layer deposition and magnetron sputtering processes are used in the production of integrated circuits (IC) to obtain structures with nanometer layer thicknesses and sharp interfaces between them. However, there are also ion-beam and reactive ion-beam deposition processes, which are mainly used to produce multilayer optical coatings. The aim of this work is to study the possibility of obtaining structures with nanometer layer thicknesses and sharp interfaces between them in the processes of ion-beam and reactive ion-beam deposition. The studies were carried out by time-of-flight secondary ion mass spectrometry (SIMS) and spectral ellipsometry methods. Study of the structure Ta (3 nm)/Nb (3 nm)/Ta (3 nm) reveals that ion-beam deposition can form structures with nanometer layer thicknesses and sharp boundaries between them. On the other hand, in reactive ion-beam deposition of the structure Nb (3 nm)/Ta₂O₅ (3 nm)/Nb (3 nm), oxidation occurs on the entire thickness of the metal layer following the metal oxide layer due to ions, atoms, and molecules of oxygen contained in the ion beam.

中文翻译：

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利用离子束和反应性离子束沉积工艺获得具有纳米层厚度的结构以及它们之间的锐利界面的可能性的研究

摘要-目前，在集成电路（IC）的生产中使用原子层沉积和磁控溅射工艺来获得具有纳米层厚度和它们之间的清晰界面的结构。然而，还有离子束和反应性离子束沉积工艺，其主要用于生产多层光学涂层。这项工作的目的是研究在离子束和反应性离子束沉积过程中获得具有纳米层厚度和它们之间的清晰界面的结构的可能性。该研究是通过飞行时间二次离子质谱（SIMS）和光谱椭偏法进行的。对结构Ta（3 nm）/ Nb（3 nm）/ Ta（3 nm）的研究表明，离子束沉积可以形成具有纳米层厚度和它们之间的清晰边界的结构。_在2 O ₅（3nm）/ Nb（3nm）中，由于离子束中包含的离子，原子和氧分子，在跟随金属氧化物层的金属层的整个厚度上发生氧化。