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Backswitching effect in relaxor SBN crystals, studied by PFM-spectroscopy
Ferroelectrics Letters Section ( IF 1.3 ) Pub Date : 2017-11-02 , DOI: 10.1080/07315171.2017.1397457
L. V. Simagina 1 , T. R. Volk 1 , Ya. V. Bodnarchuk 1 , R. V. Gainutdinov 1 , L. I. Ivleva 2
Affiliation  

ABSTRACT We present studies of local piezoelectric hysteresis loops Hω-UDC (PFM spectroscopy method) measured in SBN crystals under square pulse trains. The dependences of the loop height, i. e., of the remnant polarization Pr, on the pulse duration tp and spacing Δt were found at tp < 1000 ms. The effects are pronounced at tp/Δt < 1, which permits us to attribute them to backswitching. For the first time, the dependence of coercive fields on Δt was revealed, which as well as the backswitching is caused by Pr instability.

中文翻译:

通过 PFM 光谱研究弛豫 SBN 晶体中的反向开关效应

摘要 我们介绍了在方形脉冲序列下在 SBN 晶体中测量的局部压电磁滞回线 Hω-UDC(PFM 光谱法)的研究。在 tp < 1000 ms 处发现了环路高度,即剩余极化 Pr 对脉冲持续时间 tp 和间隔 Δt 的依赖性。效果在 tp/Δt < 1 时很明显,这使我们可以将它们归因于反向切换。首次揭示了矫顽场对 Δt 的依赖性,这以及反向切换是由 Pr 不稳定性引起的。
更新日期:2017-11-02
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