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Crystallization and characteristics of {100}-oriented diamond with CH 4 N 2 S additive under high pressure and high temperature
Chinese Physics B ( IF 1.5 ) Pub Date : 2020-09-09 , DOI: 10.1088/1674-1056/ab99b9
Yong Li , Debing Tan , Qiang Wang , Zhengguo Xiao , Changhai Tian , Lin Chen

Diamond crystallization was carried out with CH 4 N 2 S additive in the FeNiCo-C system at pressure 6.0 GPa and temperature ranging from 1290 °C to 1300 °C. The crystallization qualities of the synthetic crystals were characterized by Raman spectra and the Raman peaks located at 1331 cm −1 . Fourier transform infrared (FTIR) results showed that the hydrogen-related absorption peak of the as-grown diamond was at 2920 cm −1 , respectively. Interestingly, A-center nitrogen was observed in the obtained diamond and the characteristic absorption peaks located at 1095 cm −1 and 1282 cm −1 . Especially, the absorption peak at 1426 cm −1 attributing to the aggregation B-center nitrogen defect was distinctly found when the CH 4 N 2 S content reached 0.3 mg in the synthesis system, which was extremely rare in synthetic diamond. Furthermore, optical color centers in the synthesized crystals were investigated ...

中文翻译:

含CH 4 N 2 S添加剂的{100}取向金刚石的高温高压结晶及性能

在FeNiCo-C系统中,用CH 4 N 2 S添加剂在6.0 GPa的压力和1290°C至1300°C的温度范围内进行金刚石结晶。用拉曼光谱和位于1331cm -1处的拉曼峰表征了合成晶体的结晶质量。傅立叶变换红外(FTIR)结果表明,所生长金刚石的氢相关吸收峰分别在2920 cm -1处。有趣的是,在获得的金刚石中观察到A中心氮,特征吸收峰位于1095cm -1和1282cm -1处。特别是,在合成体系中,当CH 4 N 2 S的含量达到0.3mg时,在聚集B中心氮缺陷处的1426cm -1处出现吸收峰,这在合成金刚石中极为罕见。此外,
更新日期:2020-09-11
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